STT4PF20V

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STMicroelectronics

MOSFET P-CH 20V 3A SOT-23-6

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STMicroelectronics

MOSFET P-CH 20V 3A SOT-23-6

Technical Specifications

Parameters and characteristics for this part

Specification	STT4PF20V

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.7 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	7.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	500 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-6
Power Dissipation (Max)	1.6 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	600 mV

MOSFET P-CH 20V 3A SOT-23-6

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Technology	Mounting Type	Operating Temperature	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs(th) (Max) @ Id	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type
STMicroelectronics STT4PF20V	20 V	500 pF	4.5 V	2.7 V	MOSFET (Metal Oxide)	Surface Mount	150 °C	1.6 W	7.8 nC	110 mOhm	SOT-23-6	600 mV	SOT-23-6	10 V	3 A	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 3A (Tc) 1.6W (Tc) Surface Mount SOT-23-6

Technical documentation and resources