DMG4407SSS-13

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 8.2A I(D), 30V, 0.011OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8

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Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 8.2A I(D), 30V, 0.011OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOP-8

Technical Specifications

Parameters and characteristics for this part

Specification	DMG4407SSS-13

Current - Continuous Drain (Id) @ 25°C	9.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20.5 nC
Input Capacitance (Ciss) (Max) @ Vds	2246 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs [Max]	11 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	3 V

NRND = Not Recommended for New Design

Part	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type
Diodes Inc DMG4407SSS-13	150 °C	-50 °C	MOSFET (Metal Oxide)	9.9 A	P-Channel	8-SO	20.5 nC	6 V 10 V	8-SOIC	3.9 mm	0.154 in	25 V	3 V	30 V	11 mOhm	2246 pF	Surface Mount

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General part information

This new generation 30V P channel enhancement mode MOSFET

Technical documentation and resources