UF3C065080T3S

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Qorvo

MOSFET N-CH 650V 31A TO220-3

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Qorvo

MOSFET N-CH 650V 31A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	UF3C065080T3S

Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	12 V, 12 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	1500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-220-3
Vgs (Max)	25 V
Vgs(th) (Max) @ Id [Max]	6 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
Qorvo UF3C065080T3S	51 nC	TO-220-3	TO-220-3	Through Hole	12 V 12 V	N-Channel	1500 pF	25 V	31 A	-55 °C	175 ░C	6 V	650 V	190 W	100 mOhm
Qorvo UF3C065080B7S		D2PAK-7	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Surface Mount		N-Channel		25 V	27 A	-55 °C	175 ░C	6 V	650 V	136.4 W	105 mOhm	SiCFET (Cascode SiCJFET)	760 pF	23 nC
Qorvo UF3C065080K3S	51 nC	TO-247-3	TO-247-3	Through Hole	12 V 12 V	N-Channel	1500 pF	25 V	31 A	-55 °C	175 ░C	6 V	650 V	190 W	100 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 31A (Tc) 190W (Tc) Through Hole TO-220-3

Technical documentation and resources

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