1N277 TR

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 110V 100MA DO7

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Obsolete

Central Semiconductor Corp

DIODE GEN PURP 110V 100MA DO7

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General part information

Diode 110 V 100mA Through Hole DO-7

Technical documentation and resources

Specification	1N277 TR	1N277 Series

Current - Average Rectified (Io)	100 mA	100 mA
Current - Reverse Leakage @ Vr	250 µA	250 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	100 °C	100 °C
Operating Temperature - Junction [Min]	-50 °C	-50 °C
Package / Case	Axial, DO-204AA, DO-7	Axial, DO-204AA, DO-7
Speed	Any Speed	Any Speed
Speed	200 mA	200 mA
Supplier Device Package	DO-7	DO-7
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	110 V	110 V
Voltage - Forward (Vf) (Max) @ If	1 V	1 V

Part	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Speed	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
Central Semiconductor Corp 1N277 TR	Through Hole	250 µA	110 V	Standard	100 mA	Any Speed	200 mA	100 °C	-50 °C	Axial, DO-204AA, DO-7	1 V	DO-7
Central Semiconductor Corp 1N277 BK	Through Hole	250 µA	110 V	Standard	100 mA	Any Speed	200 mA	100 °C	-50 °C	Axial, DO-204AA, DO-7	1 V	DO-7