QSB363
ActiveON Semiconductor
SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR
QSB363
ActiveON Semiconductor
SUBMINIATURE PLASTIC SILICON INFRARED PHOTOTRANSISTOR
Description
General part information
QSB363 Series
The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package.
Technical Specifications
Parameters and characteristics for this part
| Specification | QSB363 |
|---|---|
| Current - Dark (Id) (Max) | 100 nA |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 85 °C |
| Operating Temperature (Min) | -40 °C |
| Orientation | Top View |
| Package / Case | Axial |
| Power - Max | 75 mW |
| Viewing Angle | 24 ° |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Wavelength | 940 nm |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources