1N1183
ActiveGeneSiC Semiconductor
DIODE GEN PURP 50V 35A DO203AB
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1N1183
ActiveGeneSiC Semiconductor
DIODE GEN PURP 50V 35A DO203AB
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N1183 |
|---|---|
| Current - Average Rectified (Io) | 35 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Chassis, Stud Mount |
| Operating Temperature - Junction [Max] | 190 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | DO-203AB, DO-5, Stud |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | DO-203AB |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 65.51 | |
| 800 | $ 6.23 | |||
Description
General part information
1N1183
Diode 50 V 35A Chassis, Stud Mount DO-203AB
Documents
Technical documentation and resources