DMN2400UV-7
ActiveDiodes Inc
MOSFET, AEC-Q101, DUAL N-CH, 20V, SOT563
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DMN2400UV-7
ActiveDiodes Inc
MOSFET, AEC-Q101, DUAL N-CH, 20V, SOT563
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2400UV-7 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 0.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 36 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-666, SOT-563 |
| Power - Max [Max] | 530 mW |
| Rds On (Max) @ Id, Vgs [Max] | 480 mOhm |
| Supplier Device Package | SOT-563 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 900 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.33 | |
| 10 | $ 0.24 | |||
| 100 | $ 0.12 | |||
| 500 | $ 0.11 | |||
| 1000 | $ 0.08 | |||
| Digi-Reel® | 1 | $ 0.33 | ||
| 10 | $ 0.24 | |||
| 100 | $ 0.12 | |||
| 500 | $ 0.11 | |||
| 1000 | $ 0.08 | |||
| Tape & Reel (TR) | 3000 | $ 0.08 | ||
| 6000 | $ 0.07 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 0.47 | |
| 10 | $ 0.28 | |||
| 25 | $ 0.24 | |||
| 50 | $ 0.20 | |||
| 100 | $ 0.16 | |||
| 250 | $ 0.15 | |||
| 500 | $ 0.15 | |||
| 1000 | $ 0.14 | |||
Description
General part information
DMN2400UFB4 Series
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Documents
Technical documentation and resources