IRS26072DSPBF

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 8SOIC

Search across all available documentation for this part.

Obsolete

Infineon Technologies

IC GATE DRVR HALF-BRIDGE 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	IRS26072DSPBF

Channel Type	Independent
Driven Configuration	Half-Bridge
Gate Type	IGBT, MOSFET
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	150 ns
Rise / Fall Time (Typ) [custom]	50 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Supplier Device Package	Driven Configuration	Channel Type	Logic Voltage - VIL, VIH	Gate Type	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Input Type	Number of Drivers	Voltage - Supply [Max]	Voltage - Supply [Min]	Operating Temperature [Max]	Operating Temperature [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Package / Case	Package / Case [y]	Package / Case [x]
Infineon Technologies IRS26072DSPBF	8-SOIC	Half-Bridge	Independent	0.8 V 2.5 V	IGBT MOSFET	600 V	Surface Mount	Non-Inverting	2	20 V	10 VDC	150 °C	-40 °C	150 ns	50 ns	8-SOIC	3.9 mm	0.154 in

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Half-Bridge Gate Driver IC Non-Inverting 8-SOIC

Technical documentation and resources

No documents available