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FFSM0865A

FFSM0865A

Obsolete
ON Semiconductor

SILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 8 A, 650 V, D1, POWER88

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FFSM0865A

FFSM0865A

Obsolete
ON Semiconductor

SILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 8 A, 650 V, D1, POWER88

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Description

General part information

FFSM0865A Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew

Technical Specifications

Parameters and characteristics for this part

SpecificationFFSM0865A
Capacitance463 pF
Current - Average Rectified (Io)9.6 A
Current - Reverse Leakage200 µA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / Case4-PowerTSFN
Package Length8 mm
Package Name4-PQFN
Package Width8 mm
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max)1.75 V

Pricing

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CAD

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Documents

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