
FFSM0865A
ObsoleteSILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 8 A, 650 V, D1, POWER88

FFSM0865A
ObsoleteSILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 8 A, 650 V, D1, POWER88
Description
General part information
FFSM0865A Series
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Llew
Technical Specifications
Parameters and characteristics for this part
| Specification | FFSM0865A |
|---|---|
| Capacitance | 463 pF |
| Current - Average Rectified (Io) | 9.6 A |
| Current - Reverse Leakage | 200 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | 4-PowerTSFN |
| Package Length | 8 mm |
| Package Name | 4-PQFN |
| Package Width | 8 mm |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) | 1.75 V |
Pricing
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CAD
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Documents
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