CY14B116N-BA25XI

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Infineon Technologies

IC NVSRAM 16MBIT PARALLEL 60FBGA

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Infineon Technologies

IC NVSRAM 16MBIT PARALLEL 60FBGA

Technical Specifications

Parameters and characteristics for this part

Part	Memory Type	Memory Interface	Memory Organization	Access Time	Memory Size	Technology	Write Cycle Time - Word, Page	Operating Temperature [Max]	Operating Temperature [Min]	Memory Format	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Supplier Device Package	Package / Case	Package / Case [y]	Package / Case [y]
Infineon Technologies CY14B116N-ZSP25XI	Non-Volatile	Parallel	1 M	25 ns	16 Mb	NVSRAM (Non-Volatile SRAM)	25 ns	85 °C	-40 °C	NVSRAM	Surface Mount	2.7 V	3.6 V	54-TSOP II
Infineon Technologies CY14B116N-ZSP25XIT	Non-Volatile	Parallel	1 M	25 ns	16 Mb	NVSRAM (Non-Volatile SRAM)	25 ns	85 °C	-40 °C	NVSRAM	Surface Mount	2.7 V	3.6 V	54-TSOP II
Infineon Technologies CY14B116N-BA25XI	Non-Volatile	Parallel	1 M	25 ns	16 Mb	NVSRAM (Non-Volatile SRAM)	25 ns	85 °C	-40 °C	NVSRAM	Surface Mount	2.7 V	3.6 V	10x18 60-FBGA	60-LFBGA
Infineon Technologies CY14B116N-Z30XI	Non-Volatile	Parallel	1 M	30 ns	16 Mb	NVSRAM (Non-Volatile SRAM)	30 ns	85 °C	-40 °C	NVSRAM	Surface Mount	2.7 V	3.6 V	48-TSOP I	48-TFSOP	18.4 mm	0.724 in
Infineon Technologies CY14B116N-BA25XI	Non-Volatile	Parallel	1 M	25 ns	16 Mb	NVSRAM (Non-Volatile SRAM)	25 ns	85 °C	-40 °C	NVSRAM	Surface Mount	2.7 V	3.6 V	10x18 60-FBGA	60-LFBGA

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General part information

NVSRAM (Non-Volatile SRAM) Memory IC 16Mbit Parallel 25 ns 60-FBGA (10x18)

Technical documentation and resources