Zenode.ai Logo
Beta
⌘K
Log InSign Up
BSS123K-13 - SOT-23-3

BSS123K-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsPackage PDFDatasheet+2
BSS123K-13 - SOT-23-3

BSS123K-13

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsPackage PDFDatasheet+2

Technical Specifications

Parameters and characteristics for this part

SpecificationBSS123K-13
Current - Continuous Drain (Id) @ 25°C230 mA
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs1.3 nC
Input Capacitance (Ciss) (Max) @ Vds38 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs6 Ohm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.12
20000$ 0.12
30000$ 0.11
50000$ 0.11

Description

General part information

BSS123Q Series

These N-Channel enhancement mode field effect transistors are produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. These products have been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. These products are particularly suited for low-voltage, low-current applications such as: small servo motor controls, power MOSFET gate drivers, and switching applications.