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ONSEMI FDD13AN06A0

MJB41CG

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ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 100 V, 6 A, 65 W, TO-263 (D2PAK)

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ONSEMI FDD13AN06A0

MJB41CG

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 100 V, 6 A, 65 W, TO-263 (D2PAK)

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Description

General part information

MJB41CG

MJB42C is a 100 V PNP bipolar Complementary power transistor. The complementary NPN is MJB41C.

Technical Specifications

Parameters and characteristics for this part

SpecificationMJB41CG
Current - Collector (Ic) (Max)6 A
Current - Collector Cutoff (Max)700 µA
DC Current Gain (hFE) (Min)15
Frequency - Transition3 MHz
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameD2PAK
Power - Max2 VA
Transistor TypeNPN
Vce Saturation (Max)1.5 V
Voltage - Collector Emitter Breakdown (Max)100 V

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CAD

3D models and CAD resources for this part