AT28LV010-20JU-319

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Microchip Technology

LOW-VOLTAGE 1MBIT (128KBIT X 8) PARALLEL EEPROM

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AT28LV010-20JU-319

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Microchip Technology

LOW-VOLTAGE 1MBIT (128KBIT X 8) PARALLEL EEPROM

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Description Specifications Series Pricing CAD Documents

Description

General part information

AT28LV010 Series

High-performance 1M EEPROM offers access times to 200ns with 54mW power dissipation and 3.0V supply voltage. Deselected, CMOS standby current is less than 20µA . It is accessed like static RAM for the read or write cycle without external components, it contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 128 bytes of EEPROM enables device identification or tracking.

Technical Specifications

Parameters and characteristics for this part

Specification	AT28LV010-20JU-319

Access Time	200 ns
Memory Depth	128 K
Memory Format	EEPROM
Memory Interface (Type)	Parallel
Memory Size	1 Mbit
Memory Type	Non-Volatile
Memory Width	8 bit
Mounting Type	Surface Mount
Operating Temperature (Max)	85 °C
Operating Temperature (Min)	-40 °C
Package / Case	32-LCC (J-Lead)
Package Length	13.97 mm
Package Name	32-PLCC
Package Width	11.43 mm
Technology	EEPROM
Voltage - Supply (Maximum)	3.6 V
Voltage - Supply (Minimum)	3 V
Write Cycle Time - Page	10 ms
Write Cycle Time - Word	10 ms

AT28LV010 Series

Part	Technology	Memory Type	Mounting Type	Memory Format	Memory Interface (Type)	Package / Case	Write Cycle Time - Word	Write Cycle Time - Page	Package Width	Package Name	Package Length	Memory Depth	Memory Width	Memory Size	Access Time	Operating Temperature (Min)	Operating Temperature (Max)	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)
Microchip Technology AT28LV010-20JU	EEPROM	Non-Volatile	Surface Mount	EEPROM	Parallel	32-LCC (J-Lead)	10 ms	10 ms	11.43 mm	32-PLCC	13.97 mm	128 K	8 bit	1 Mbit	200 ns	-40 °C	85 °C	3.6 V	3 V
Microchip Technology AT28LV010-20PI	EEPROM	Non-Volatile	Through Hole	EEPROM	Parallel		10 ms	10 ms	15.24 mm	32-DIP 32-PDIP	0.6 in	128 K	8 bit	1 Mbit	200 ns	-40 °C	85 °C	3.6 V	3 V
Microchip Technology AT28LV010-20TU-235	EEPROM	Non-Volatile	Surface Mount	EEPROM	Parallel		10 ms	10 ms	18.4 mm	32-TFSOP 32-TSOP	0.724 "	128 K	8 bit	1 Mbit	200 ns	-40 °C	85 °C	3.6 V	3 V
Microchip Technology AT28LV010-25SC	EEPROM	Non-Volatile	Surface Mount	EEPROM	Parallel		10 ms	10 ms	7.5 mm	32-SOIC 32-SOP	0.295 in	128 K	8 bit	1 Mbit	250 ns	0 °C	70 °C	3.6 V	3 V
Microchip Technology AT28LV010-20JI	EEPROM	Non-Volatile	Surface Mount	EEPROM	Parallel	32-LCC (J-Lead)	10 ms	10 ms	11.43 mm	32-PLCC	13.97 mm	128 K	8 bit	1 Mbit	200 ns	-40 °C	85 °C	3.6 V	3 V
Microchip Technology AT28LV010-20JU-630	EEPROM	Non-Volatile	Surface Mount	EEPROM	Parallel	32-LCC (J-Lead)	10 ms	10 ms	11.43 mm	32-PLCC	13.97 mm	128 K	8 bit	1 Mbit	200 ns	-40 °C	85 °C	3.6 V	3 V
Microchip Technology AT28LV010-20TA	EEPROM	Non-Volatile	Surface Mount	EEPROM	Parallel		10 ms	10 ms	18.4 mm	32-TFSOP 32-TSOP	0.724 "	128 K	8 bit	1 Mbit	200 ns	-40 °C	125 °C	3.6 V	3 V
Microchip Technology AT28LV010-20JA	EEPROM	Non-Volatile	Surface Mount	EEPROM	Parallel	32-LCC (J-Lead)	10 ms	10 ms	11.43 mm	32-PLCC	13.97 mm	128 K	8 bit	1 Mbit	200 ns	-40 °C	125 °C	3.6 V	3 V
Microchip Technology AT28LV010-20TI	EEPROM	Non-Volatile	Surface Mount	EEPROM	Parallel		10 ms	10 ms	18.4 mm	32-TFSOP 32-TSOP	0.724 "	128 K	8 bit	1 Mbit	200 ns	-40 °C	85 °C	3.6 V	3 V
Microchip Technology AT28LV010-20JU-T	EEPROM	Non-Volatile	Surface Mount	EEPROM	Parallel	32-LCC (J-Lead)	10 ms	10 ms	13.97 mm	32-PLCC	0.45 in	128 K	8 bit	1 Mbit	200 ns	-40 °C	85 °C	3.6 V	3 V