IRFH4251DTRPBF

Obsolete

Infineon Technologies

STRONGIRFET™ N+N DUAL POWER MOSFET 25 V ; POWERSTAGE 5X6 TISON-8 PACKAGE; 0.85 MOHM; SCHOTTKY

Search across all available documentation for this part.

Obsolete

Infineon Technologies

STRONGIRFET™ N+N DUAL POWER MOSFET 25 V ; POWERSTAGE 5X6 TISON-8 PACKAGE; 0.85 MOHM; SCHOTTKY

Technical Specifications

Parameters and characteristics for this part

Specification	IRFH4251DTRPBF

Configuration	2 N-Channel (Dual), Schottky
Current - Continuous Drain (Id) @ 25°C [Max]	188 A
Current - Continuous Drain (Id) @ 25°C [Min]	64 A
Drain to Source Voltage (Vdss)	25 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	15 nC
Input Capacitance (Ciss) (Max) @ Vds	1314 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max	31 W, 63 W
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	PG-TISON-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Power - Max	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Configuration	Package / Case	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IRFH4251DTRPBF	31 W 63 W	1314 pF	25 V	2 N-Channel (Dual) Schottky	8-PowerVDFN	3.2 mOhm	188 A	64 A	Surface Mount	15 nC	MOSFET (Metal Oxide)	PG-TISON-8	2.1 V	Logic Level Gate	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 25V 64A, 188A 31W, 63W Surface Mount PG-TISON-8

Technical documentation and resources