SFF506GHC0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 5A ITO220AB

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Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 5A ITO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SFF506GHC0G

Capacitance @ Vr, F	50 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Qualification	AEC-Q101
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	ITO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Package / Case	Speed	Current - Average Rectified (Io)	Grade	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Qualification	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Technology	Supplier Device Package	Capacitance @ Vr, F
Taiwan Semiconductor Corporation SFF506GHC0G	35 ns	10 µA	1.3 V	TO-220-3 Full Pack Isolated Tab	200 mA 500 ns	5 A	Automotive	150 °C	-55 °C	AEC-Q101	400 V	Through Hole	Standard	ITO-220AB	50 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 400 V 5A Through Hole ITO-220AB

Technical documentation and resources