DMN2013UFDE-7
ActiveDiodes Inc
MOSFET, N-CH, 20V, 10.5A, U-DFN2020 ROHS COMPLIANT: YES
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DMN2013UFDE-7
ActiveDiodes Inc
MOSFET, N-CH, 20V, 10.5A, U-DFN2020 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2013UFDE-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 25.8 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2453 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-PowerUDFN |
| Power Dissipation (Max) | 660 mW |
| Rds On (Max) @ Id, Vgs [Max] | 11 mOhm |
| Supplier Device Package | U-DFN2020-6 (Type E) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
DMN2013UFDE Series
This new generation 20V N Channel enhancement mode MOSFET has been designed to minimise RDS(on)and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.
Documents
Technical documentation and resources