1N1200A
ActiveGeneSiC Semiconductor
DIODE GEN PURP 100V 12A DO4
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1N1200A
ActiveGeneSiC Semiconductor
DIODE GEN PURP 100V 12A DO4
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N1200A |
|---|---|
| Current - Average Rectified (Io) | 12 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Chassis, Stud Mount |
| Operating Temperature - Junction [Max] | 200 C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | Stud, DO-203AA, DO-4 |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | DO-4 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 6.33 | |
| 10 | $ 5.10 | |||
| 25 | $ 4.68 | |||
| 100 | $ 4.11 | |||
| 250 | $ 3.77 | |||
| 500 | $ 3.53 | |||
Description
General part information
1N1200A
Diode 100 V 12A Chassis, Stud Mount DO-4
Documents
Technical documentation and resources