DMG2305UXQ-13
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
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DMG2305UXQ-13
ActiveDiodes Inc
P-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMG2305UXQ-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.2 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10.2 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 808 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power Dissipation (Max) | 1.4 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 52 mOhm |
| Supplier Device Package | SOT-23-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 900 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.06 | |
| 20000 | $ 0.06 | |||
| 30000 | $ 0.06 | |||
| 50000 | $ 0.05 | |||
| 70000 | $ 0.05 | |||
| 100000 | $ 0.05 | |||
Description
General part information
DMG2305UXQ Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources