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BUD42DT4G

BUD42DT4G

Obsolete
ON Semiconductor

HIGH SPEED, HIGH GAIN NPN BIPOLAR POWER TRANSISTOR

Find alt
BUD42DT4G

BUD42DT4G

Obsolete
ON Semiconductor

HIGH SPEED, HIGH GAIN NPN BIPOLAR POWER TRANSISTOR

Find alt

Description

General part information

BUD42DT4G

The NPN Bipolar Power Transistor is ideally suitable for light ballast applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationBUD42DT4G
Current - Collector (Ic) (Max)4 A
Current - Collector Cutoff (Max)100 µA
DC Current Gain (hFE) (Min)10
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPak
Power - Max25 W
Transistor TypeNPN
Vce Saturation (Max)1 V
Voltage - Collector Emitter Breakdown (Max)350 V

Pricing

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CAD

3D models and CAD resources for this part