IRFSL7787PBF
ObsoleteSTRONGIRFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 8.4 MOHM;
Deep-Dive with AI
Search across all available documentation for this part.
IRFSL7787PBF
ObsoleteSTRONGIRFET™ N-CHANNEL POWER MOSFET ; I2PAK TO-262 PACKAGE; 8.4 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRFSL7787PBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 76 A |
| Drain to Source Voltage (Vdss) | 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 109 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4020 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) @ Id, Vgs | 8.4 mOhm |
| Supplier Device Package | TO-262 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IRFSL7787 Series
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Documents
Technical documentation and resources