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Package Image for SOT223

ZXMN10A08GTA

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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Package Image for SOT223

ZXMN10A08GTA

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

ZXMN10A08GTA

N-Channel 100 V 2A (Ta) 2W (Ta) Surface Mount SOT-223-3

Technical Specifications

Parameters and characteristics for this part

SpecificationZXMN10A08GTA
Current - Continuous Drain (Id) (Ta)2 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)7.7 nC
Input Capacitance (Ciss) (Max)405 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-261AA, TO-261-4
Package NameSOT-223-3
Power Dissipation (Max)2 W
Rds On (Max)250 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2 V

Pricing

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CAD

3D models and CAD resources for this part