NVMJD027N10MCLTWG
ActiveON Semiconductor
MOSFET - POWER, DUAL, N-CHANNEL, 100 V, 26 MΩ, 28 A
NVMJD027N10MCLTWG
ActiveON Semiconductor
MOSFET - POWER, DUAL, N-CHANNEL, 100 V, 26 MΩ, 28 A
Description
General part information
NVMJD027N10MCLTWG
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | NVMJD027N10MCLTWG |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 7.4 A |
| Current - Continuous Drain (Id) (Tc) | 28 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Max) | 9.9 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 697 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-LFPAK56, SOT-1205 |
| Package Name | 8-LFPAK |
| Power - Max (Ta) | 3.1 W |
| Power - Max (Tc) | 46 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 26 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 3 V |
Pricing
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