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IRFB5615PBF - INFINEON IRFB5615PBF

IRFB5615PBF

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Infineon Technologies

POWER MOSFET, N CHANNEL, 150 V, 35 A, 0.032 OHM, TO-220AB, THROUGH HOLE

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IRFB5615PBF - INFINEON IRFB5615PBF

IRFB5615PBF

Active
Infineon Technologies

POWER MOSFET, N CHANNEL, 150 V, 35 A, 0.032 OHM, TO-220AB, THROUGH HOLE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB5615PBF
Current - Continuous Drain (Id) @ 25°C35 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
Input Capacitance (Ciss) (Max) @ Vds1750 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)144 W
Rds On (Max) @ Id, Vgs [Max]39 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.56
10$ 1.65
100$ 1.13
500$ 0.91
1000$ 0.84
2000$ 0.78
5000$ 0.76
NewarkEach 1$ 1.51
10$ 0.86
100$ 0.79
500$ 0.67
1000$ 0.61
3000$ 0.57
10000$ 0.53

Description

General part information

IRFB5615 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.