DMTH6015LPDW-13
ActiveDiodes Inc
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
DMTH6015LPDW-13
ActiveDiodes Inc
60V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMTH6015LPDW-13
This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance. This device is ideal for use in power management and load switch.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH6015LPDW-13 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 9.4 A |
| Current - Continuous Drain (Id) (Tc) | 36.3 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Max) | 14.3 nC |
| Input Capacitance (Ciss) (Max) | 825 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PowerDI5060-8 (Type UXD) |
| Power - Max (Ta) | 2.6 W |
| Power - Max (Tc) | 39.5 W |
| Rds On (Max) | 20 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.5 V |
Pricing
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