Technical Specifications
Parameters and characteristics for this part
| Specification | BC847BLP4-7 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 15 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 200 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-XFDFN |
| Power - Max [Max] | 250 mW |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
BC847BVNQ Series
This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
Documents
Technical documentation and resources
