HGTG20N60A4D
ObsoleteIGBT 600V 70A TO-247-3
HGTG20N60A4D
ObsoleteIGBT 600V 70A TO-247-3
Description
General part information
HGTG20N60A4D Series
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
Technical Specifications
Parameters and characteristics for this part
| Specification | HGTG20N60A4D |
|---|---|
| Current - Collector (Ic) (Max) | 70 A |
| Current - Collector Pulsed (Icm) | 280 A |
| Gate Charge | 142 nC |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power - Max | 290 W |
| Reverse Recovery Time (trr) | 35 ns |
| Switching Energy (Off) | 150 µJ |
| Switching Energy (On) | 105 µJ |
| Td (off) @ 25°C | 73 ns |
| Td (on) @ 25°C | 15 ns |
| Test Condition Current | 20 A |
| Test Condition Resistance | 3 Ohm |
| Test Condition Voltage | 390 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.7 V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources