NVBG032N065M3S
ActiveSILICON CARBIDE (SIC) MOSFET – ELITESIC, 32 MOHM, 650 V, M3S, D2PAK-7L
NVBG032N065M3S
ActiveSILICON CARBIDE (SIC) MOSFET – ELITESIC, 32 MOHM, 650 V, M3S, D2PAK-7L
Description
General part information
NVBG032N065M3S
EliteSiC 650V M3S MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Technical Specifications
Parameters and characteristics for this part
| Specification | NVBG032N065M3S |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 52 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 55 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 1409 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | D2PAK, D2PAK-7 |
| Power Dissipation (Max) | 200 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 44 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -8 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources