Specification	AT28HC256E-12PI

Access Time	120 ns
Memory Depth	32 K
Memory Format	EEPROM
Memory Interface (Type)	Parallel
Memory Size	32 kB
Memory Type	Non-Volatile
Memory Width	8 bit
Mounting Type	Through Hole
Operating Temperature (Max)	85 °C
Operating Temperature (Min)	-40 °C
Package Length	0.6 in
Package Name	28-PDIP, 28-DIP
Package Width	15.24 mm
Technology	EEPROM
Voltage - Supply (Maximum)	5.5 V
Voltage - Supply (Minimum)	4.5 V
Write Cycle Time - Page	10 ms
Write Cycle Time - Word	10 ms

AT28HC256 Series

...

Part	Package / Case	Access Time	Memory Format	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Write Cycle Time - Word	Write Cycle Time - Page	Memory Type	Memory Interface (Type)	Memory Size	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Technology	Memory Depth	Memory Width	Package Width	Package Name	Package Length
Microchip Technology AT28HC256-12JI	32-LCC (J-Lead)	120 ns	EEPROM	Surface Mount	-40 °C	85 °C	10 ms	10 ms	Non-Volatile	Parallel	32 kB	5.5 V	4.5 V	EEPROM	32 K	8 bit	11.43 mm	32-PLCC	13.97 mm
Microchip Technology AT28HC256-90FM/883	28-CFlatpack	90 ns	EEPROM	Surface Mount	-55 °C	125 °C	10 ms	10 ms	Non-Volatile	Parallel	32 kB	5.5 V	4.5 V	EEPROM	32 K	8 bit		28-FlatPack Ceramic Bottom-Brazed
Microchip Technology AT28HC256E-12TU-T		120 ns	EEPROM	Surface Mount	-40 °C	85 °C	10 ms	10 ms	Non-Volatile	Parallel	32 kB	5.5 V	4.5 V	EEPROM	32 K	8 bit	11.8 mm	28-TSOP 28-TSSOP	0.465 in
Microchip Technology AT28HC256E-90TU		90 ns	EEPROM	Surface Mount	-40 °C	85 °C	10 ms	10 ms	Non-Volatile	Parallel	32 kB	5.5 V	4.5 V	EEPROM	32 K	8 bit	11.8 mm	28-TSOP 28-TSSOP	0.465 in
Microchip Technology AT28HC256F-12UM/883	28-BCPGA	120 ns	EEPROM	Through Hole	-55 °C	125 °C	3 ms	3 ms	Non-Volatile	Parallel	32 kB	5.5 V	4.5 V	EEPROM	32 K	8 bit	16.51 mm	28-CPGA	13.97 mm
Microchip Technology AT28HC256E-12DM/883		120 ns	EEPROM	Through Hole	-55 °C	125 °C	10 ms	10 ms	Non-Volatile	Parallel	32 kB	5.5 V	4.5 V	EEPROM	32 K	8 bit	15.24 mm	28-CDIP 28-CERDIP	0.6 in
Microchip Technology AT28HC256E-70PI		70 ns	EEPROM	Through Hole	-40 °C	85 °C	10 ms	10 ms	Non-Volatile	Parallel	32 kB	5.5 V	4.5 V	EEPROM	32 K	8 bit	15.24 mm	28-DIP 28-PDIP	0.6 in
Microchip Technology AT28HC256F-90TU-T		90 ns	EEPROM	Surface Mount	-40 °C	85 °C	3 ms	3 ms	Non-Volatile	Parallel	32 kB	5.5 V	4.5 V	EEPROM	32 K	8 bit	11.8 mm	28-TSOP 28-TSSOP	0.465 in
Microchip Technology AT28HC256-90PU		90 ns	EEPROM	Through Hole	-40 °C	85 °C	10 ms	10 ms	Non-Volatile	Parallel	32 kB	5.5 V	4.5 V	EEPROM	32 K	8 bit	15.24 mm	28-DIP 28-PDIP	0.6 in
Microchip Technology AT28HC256F-12FM/883	28-CFlatpack	120 ns	EEPROM	Surface Mount	-55 °C	125 °C	3 ms	3 ms	Non-Volatile	Parallel	32 kB	5.5 V	4.5 V	EEPROM	32 K	8 bit		28-FlatPack Ceramic Bottom-Brazed

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AT28HC256E-12PI | Datasheet