
2SC3596E
ActiveON Semiconductor
TRANS NPN 60V 0.3A TO-126

2SC3596E
ActiveON Semiconductor
TRANS NPN 60V 0.3A TO-126
Description
General part information
2SC3596E
Bipolar (BJT) Transistor NPN 60 V 300 mA 700MHz 1.2 W Through Hole TO-126
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SC3596E |
|---|---|
| Current - Collector (Ic) (Max) | 0.3 mA |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 100 |
| Frequency - Transition | 700 MHz |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-225AA, TO-126-3 |
| Package Name | TO-126 |
| Power - Max | 1.2 VA |
| Transistor Type | NPN |
| Vce Saturation (Max) | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available