Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TN2510N8-G | TN2510 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | - | 730 mA |
| Drain to Source Voltage (Vdss) | - | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | - | 3 - 10 V |
| FET Type | - | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - | 125 pF |
| Mounting Type | - | Surface Mount |
| null | - | |
| Operating Temperature | - | -55 °C |
| Operating Temperature | - | 150 °C |
| Package / Case | - | TO-243AA |
| Supplier Device Package | - | TO-243AA (SOT-89) |
| Technology | - | MOSFET (Metal Oxide) |
| Vgs (Max) | - | 20 V |
| Vgs(th) (Max) @ Id | - | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.35 | |
| 25 | $ 1.13 | |||
| 100 | $ 1.02 | |||
| Digi-Reel® | 1 | $ 1.35 | ||
| 25 | $ 1.13 | |||
| 100 | $ 1.02 | |||
| Tape & Reel (TR) | 2000 | $ 1.02 | ||
| Microchip Direct | T/R | 1 | $ 1.35 | |
| 25 | $ 1.13 | |||
| 100 | $ 1.02 | |||
| 1000 | $ 0.86 | |||
| 5000 | $ 0.79 | |||
| 10000 | $ 0.73 | |||
TN2510 Series
MOSFET, N-Channel Enhancement-Mode, 100V, 1.5 Ohm
| Part | FET Type | Vgs (Max) | Supplier Device Package | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Package / Case | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TN2510N8-G | |||||||||||||
Microchip Technology TN2510N8-G | N-Channel | 20 V | TO-243AA (SOT-89) | Surface Mount | -55 °C | 150 °C | 3 V, 10 V | 125 pF | 730 mA | TO-243AA | 100 V | 2 V | MOSFET (Metal Oxide) |
Description
General part information
TN2510 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources