SST25WF040BT-40I/NP
ActiveFLASH MEMORY, SERIAL, SERIAL NOR, 4 MBIT, 512K X 8BIT, SPI, USON, 8 PINS
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SST25WF040BT-40I/NP
ActiveFLASH MEMORY, SERIAL, SERIAL NOR, 4 MBIT, 512K X 8BIT, SPI, USON, 8 PINS
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | SST25WF040BT-40I/NP | SST25WF040B Series |
|---|---|---|
| Clock Frequency | 40 MHz | 40 MHz |
| Memory Format | FLASH | FLASH |
| Memory Interface | SPI | SPI |
| Memory Organization | 512 K | 512 K |
| Memory Size | 512 kb | 512 kb |
| Memory Type | Non-Volatile | Non-Volatile |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 85 °C | 85 - 125 °C |
| Operating Temperature [Min] | -40 °C | -40 °C |
| Package / Case | 8-UFDFN Exposed Pad | 8-SOIC, 8-UFDFN Exposed Pad |
| Package / Case | - | 3.9 mm |
| Package / Case | - | 0.154 in |
| Supplier Device Package | 8-USON (2x3) | 8-SOIC, 8-USON (2x3) |
| Technology | FLASH | FLASH |
| Voltage - Supply [Max] | 1.95 V | 1.95 V |
| Voltage - Supply [Min] | 1.65 V | 1.65 V |
| Write Cycle Time - Word, Page | 1 ms | 1 ms |
SST25WF040B Series
4Mb 1.65-1.95V SPI Serial Flash
| Part | Write Cycle Time - Word, Page | Memory Type | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Memory Format | Memory Interface | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Organization | Memory Size | Supplier Device Package | Technology | Clock Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology SST25WF040BT-40I/SN | 1 ms | Non-Volatile | 85 °C | -40 °C | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | FLASH | SPI | 1.95 V | 1.65 V | 512 K | 512 kb | 8-SOIC | FLASH | 40 MHz |
Microchip Technology SST25WF040B-40I/SN | 1 ms | Non-Volatile | 85 °C | -40 °C | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | FLASH | SPI | 1.95 V | 1.65 V | 512 K | 512 kb | 8-SOIC | FLASH | 40 MHz |
Microchip Technology SST25WF040BT-40E/SN | 1 ms | Non-Volatile | 125 °C | -40 °C | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | FLASH | SPI | 1.95 V | 1.65 V | 512 K | 512 kb | 8-SOIC | FLASH | 40 MHz |
Microchip Technology SST25WF040BT-40I/NP | 1 ms | Non-Volatile | 85 °C | -40 °C | 8-UFDFN Exposed Pad | Surface Mount | FLASH | SPI | 1.95 V | 1.65 V | 512 K | 512 kb | 8-USON (2x3) | FLASH | 40 MHz | ||
Microchip Technology SST25WF040B-40E/SN | 1 ms | Non-Volatile | 125 °C | -40 °C | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | FLASH | SPI | 1.95 V | 1.65 V | 512 K | 512 kb | 8-SOIC | FLASH | 40 MHz |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.35 | |
| 25 | $ 1.32 | |||
| 100 | $ 1.27 | |||
| Digi-Reel® | 1 | $ 1.35 | ||
| 25 | $ 1.32 | |||
| 100 | $ 1.27 | |||
| Tape & Reel (TR) | 3000 | $ 1.27 | ||
| Microchip Direct | T/R | 1 | $ 1.31 | |
| 25 | $ 1.28 | |||
| 100 | $ 1.23 | |||
| 1000 | $ 1.14 | |||
| 5000 | $ 1.10 | |||
| Newark | Each (Supplied on Cut Tape) | 100 | $ 1.27 | |
Description
General part information
SST25WF040B Series
SST25WF040B is a member of the Serial Flash 25 Series family and feature a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. SPI serial flash memory is manufactured with proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.
This Serial Flash significantly improve performance and reliability, while lowering power consumption. The device writes (Program or Erase) with a single power supply of 1.65-1.95V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies.