DMN2170U-7

Obsolete

Diodes Inc

MOSFET N-CH 20V 2.3A SOT23-3

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Obsolete

Diodes Inc

MOSFET N-CH 20V 2.3A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2170U-7

Current - Continuous Drain (Id) @ 25°C	2.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	217 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	600 mW
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max) [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc DMN2170U-7	2.3 A	N-Channel	70 mOhm	SOT-23-3	600 mW	12 V	217 pF	1.5 V 4.5 V	Surface Mount	20 V	SC-59 SOT-23-3 TO-236-3	1 V	MOSFET (Metal Oxide)	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 2.3A (Ta) 600mW (Ta) Surface Mount SOT-23-3

Technical documentation and resources