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ONSEMI FDPF4D5N10C

FCPF1300N80Z

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ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 4 A, 1.3 Ω, TO-220F

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ONSEMI FDPF4D5N10C

FCPF1300N80Z

Active
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 4 A, 1.3 Ω, TO-220F

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Description

General part information

FCPF1300N80Z

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationFCPF1300N80Z
Current - Continuous Drain (Id) (Tc)4 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)21 nC
Input Capacitance (Ciss) (Max)880 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3 Full Pack
Package NameTO-220F-3
Power Dissipation (Max)24 W
Rds On (Max)1.3 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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CAD

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