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GSFG65R900

GSJG60R880

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Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 5.00A, 600

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GSFG65R900

GSJG60R880

Active
Good-Ark Semiconductor

MOSFET, N-CH, SINGLE, 5.00A, 600

Find alt

Description

General part information

GSJG60R880

N-Channel 600 V 5A (Tc) 42W (Tc) Through Hole TO-251

Technical Specifications

Parameters and characteristics for this part

SpecificationGSJG60R880
Current - Continuous Drain (Id) (Tc)5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)12 nC
Input Capacitance (Ciss) (Max)304 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Package NameTO-251
Power Dissipation (Max)42 W
Rds On (Max)880 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)4 V

Pricing

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