GCMX080B120S1-E1

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SemiQ

SIC 1200V 80M MOSFET SOT-227

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SemiQ

SIC 1200V 80M MOSFET SOT-227

Technical Specifications

Parameters and characteristics for this part

Specification	GCMX080B120S1-E1

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	58 nC
Input Capacitance (Ciss) (Max) @ Vds	1336 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	142 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	SOT-227
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4 V

SIC 1200V 80M MOSFET SOT-227

Part	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Vgs (Max) [Min]	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
SemiQ GCMX080B120S1-E1	4 V	SOT-227-4, miniBLOC	-55 °C	175 ░C	100 mOhm	N-Channel	58 nC	30 A	Chassis Mount	SOT-227	-10 V	25 V	1336 pF	142 W	1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1200 V 30A (Tc) 142W (Tc) Chassis Mount SOT-227

Technical documentation and resources