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FDI9409-F085

FDI9409-F085

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 40V, 80A, 3.8MΩ

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FDI9409-F085

FDI9409-F085

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 40V, 80A, 3.8MΩ

Find alt

Description

General part information

FDI9409-F085

N-Channel PowerTrench®MOSFET 40V, 80A, 3.8mΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDI9409-F085
Current - Continuous Drain (Id) (Tc)80 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)56 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)2980 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-262AA, I2PAK, TO-262-3 Long Leads
Package NameI2PAK (TO-262)
Power Dissipation (Max)94 W
QualificationAEC-Q101
Rds On (Max)3.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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