IRFSL7534PBF

Obsolete

Infineon Technologies

MOSFET N-CH 60V 195A TO262

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 60V 195A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	IRFSL7534PBF

Current - Continuous Drain (Id) @ 25°C	195 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	279 nC
Input Capacitance (Ciss) (Max) @ Vds	10034 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	294 W
Rds On (Max) @ Id, Vgs	2.4 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.7 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Package / Case	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IRFSL7534PBF	-55 °C	175 ░C	TO-262	3.7 V	2.4 mOhm	294 W	20 V	Surface Mount	I2PAK TO-262-3 Long Leads TO-262AA	N-Channel	MOSFET (Metal Oxide)	195 A	10034 pF	60 V	6 V 10 V	279 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$