Zenode.ai Logo
DMT6009LCT

DMT6009LCT

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt
DMT6009LCT

DMT6009LCT

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

DMT6009LCT

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT6009LCT
Current - Continuous Drain (Id) (Tc)37.2 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)33.5 nC
Input Capacitance (Ciss) (Max)1925 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220-3
Power Dissipation (Max)25 W, 2.2 W
Rds On (Max)12 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)16 V
Vgs(th) (Max)2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part