FQD2N60CTM-WS
ObsoletePOWER MOSFET, N-CHANNEL, QFET<SUP>®</SUP>, 600 V, 1.9 A, 4.7 Ω, DPAK
FQD2N60CTM-WS
ObsoletePOWER MOSFET, N-CHANNEL, QFET<SUP>®</SUP>, 600 V, 1.9 A, 4.7 Ω, DPAK
Description
General part information
FQD2N60C Series
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Technical Specifications
Parameters and characteristics for this part
| Specification | FQD2N60CTM-WS |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 1.9 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 12 nC |
| Input Capacitance (Ciss) (Max) | 235 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252AA |
| Power Dissipation (Max) | 2.5 W, 44 W |
| Rds On (Max) | 4.7 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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Documents
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