FQPF11P06
ObsoletePOWER MOSFET, P-CHANNEL, QFET<SUP>®</SUP>, -60 V, -8.6 A, 175 MΩ, TO-220F
FQPF11P06
ObsoletePOWER MOSFET, P-CHANNEL, QFET<SUP>®</SUP>, -60 V, -8.6 A, 175 MΩ, TO-220F
Description
General part information
FQPF11P06
This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..
Technical Specifications
Parameters and characteristics for this part
| Specification | FQPF11P06 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 8.6 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 17 nC |
| Input Capacitance (Ciss) (Max) | 550 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220F-3 |
| Power Dissipation (Max) | 30 W |
| Rds On (Max) | 175 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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Documents
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