IRFS4615TRLPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 42 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 42 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS4615TRLPBF

Current - Continuous Drain (Id) @ 25°C	33 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	1750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	144 W
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IRFS4615TRLPBF	42 mOhm	MOSFET (Metal Oxide)	144 W	-55 °C	175 ░C	150 V	20 V	33 A	N-Channel	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	40 nC	1750 pF	Surface Mount	5 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 150 V 33A (Tc) 144W (Tc) Surface Mount D2PAK

Technical documentation and resources