IRFP4229PBF

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Infineon Technologies

POWER MOSFET, HEXFET, N CHANNEL, 250 V, 44 A, 0.038 OHM, TO-247AC, THROUGH HOLE

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IRFP4229PBF

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Infineon Technologies

POWER MOSFET, HEXFET, N CHANNEL, 250 V, 44 A, 0.038 OHM, TO-247AC, THROUGH HOLE

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Technical Specifications

Parameters and characteristics for this part

Specification	IRFP4229PBF

Current - Continuous Drain (Id) @ 25°C	44 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4560 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	310 W
Rds On (Max) @ Id, Vgs [Max]	46 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

IRFP4229 Series

Part	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)
Infineon Technologies IRFP4229PBF	46 mOhm	TO-247AC	30 V	5 V	N-Channel	4560 pF	TO-247-3	310 W	-40 C	175 °C	250 V	44 A	MOSFET (Metal Oxide)	Through Hole	110 nC	10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.88
		10	$ 2.59
		100	$ 2.07
Newark	Each	1	$ 3.57
		10	$ 3.55
		25	$ 2.39
		50	$ 2.26
		100	$ 2.14
		250	$ 2.00
		800	$ 1.88

Description

General part information

IRFP4229 Series

The IRFP4229PBF is a HEXFET® single N-channel PDP switch Power MOSFET specifically designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. It combines to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Documents

Technical documentation and resources