Specification	MT53E256M32D2DS-053 AAT:B

Clock Frequency	1866 MHz
Grade	Automotive
Memory Depth	256 M
Memory Format	DRAM
Memory Size	1 GB
Memory Type	Volatile
Memory Width	32 bit
Mounting Type	Surface Mount
Operating Temperature (Max)	105 °C
Operating Temperature (Min)	-40 °C
Package / Case	200-WFBGA
Package Length	10 mm
Package Name	200-WFBGA
Package Width	14.5 mm
Qualification	AEC-Q100
Technology	SDRAM - Mobile LPDDR4
Voltage - Supply	1.1 V

MT53E256 Series

Part	Memory Interface (Type)	Write Cycle Time - Word	Write Cycle Time - Page	Memory Size	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Operating Temperature (Min)	Operating Temperature (Max)	Grade	Access Time	Mounting Type	Clock Frequency	Qualification	Package / Case	Memory Width	Memory Depth	Package Width	Package Name	Package Length	Technology	Memory Type	Memory Format	Voltage - Supply
Micron Technology Inc. MT53E256M16D1FW-046 AUT:B	Parallel	18 ns	18 ns	4 Gbit	1.06 V	1.17 V	-40 °C	125 °C	Automotive	3.5 ns	Surface Mount	2.133 GHz	AEC-Q100	200-TFBGA	16 bit	256 M	14.5 mm	200-TFBGA	10 mm	SDRAM - Mobile LPDDR4X	Volatile	DRAM
Micron Technology Inc. MT53E256M16D1FW-046 AAT:B	Parallel	18 ns	18 ns	4 Gbit	1.06 V	1.17 V	-40 °C	105 °C	Automotive	3.5 ns	Surface Mount	2.133 GHz	AEC-Q100	200-TFBGA	16 bit	256 M	14.5 mm	200-TFBGA	10 mm	SDRAM - Mobile LPDDR4X	Volatile	DRAM
Micron Technology Inc. MT53E256M32D2DS-053 AAT:B TR				1 GB			-40 °C	105 °C	Automotive		Surface Mount	1866 MHz	AEC-Q100	200-WFBGA	32 bit	256 M	14.5 mm	200-WFBGA	10 mm	SDRAM - Mobile LPDDR4	Volatile	DRAM	1.1 V
Micron Technology Inc. MT53E256M32D2FW-046 AAT:B	Parallel	18 ns	18 ns	1 GB	1.06 V	1.17 V	-40 °C	105 °C	Automotive	3.5 ns	Surface Mount	2.133 GHz	AEC-Q100	200-TFBGA	32 bit	256 M	14.5 mm	200-TFBGA	10 mm	SDRAM - Mobile LPDDR4X	Volatile	DRAM
Micron Technology Inc. MT53E256M32D2DS-053 AUT:B				1 GB			-40 °C	125 °C	Automotive		Surface Mount	1866 MHz	AEC-Q100	200-WFBGA	32 bit	256 M	14.5 mm	200-WFBGA	10 mm	SDRAM - Mobile LPDDR4	Volatile	DRAM	1.1 V
Micron Technology Inc. MT53E256M16D1FW-046 WT:B	Parallel	18 ns	18 ns	4 Gbit	1.06 V	1.17 V	-30 °C	85 °C		3.5 ns	Surface Mount	2.133 GHz		200-TFBGA	16 bit	256 M	14.5 mm	200-TFBGA	10 mm	SDRAM - Mobile LPDDR4X	Volatile	DRAM
Micron Technology Inc. MT53E256M32D2FW-046 WT:B TR	Parallel	18 ns	18 ns	1 GB	1.06 V	1.17 V	-30 °C	85 °C		3.5 ns	Surface Mount	2.133 GHz		200-TFBGA	32 bit	256 M	14.5 mm	200-TFBGA	10 mm	SDRAM - Mobile LPDDR4X	Volatile	DRAM
Micron Technology Inc. MT53E256M32D2FW-046 IT:B TR	Parallel	18 ns	18 ns	1 GB	1.06 V	1.17 V	-40 °C	95 °C		3.5 ns	Surface Mount	2.133 GHz		200-TFBGA	32 bit	256 M	14.5 mm	200-TFBGA	10 mm	SDRAM - Mobile LPDDR4X	Volatile	DRAM
Micron Technology Inc. MT53E256M32D2DS-053 AIT:B TR				1 GB			-40 °C	95 °C	Automotive		Surface Mount	1866 MHz	AEC-Q100	200-WFBGA	32 bit	256 M	14.5 mm	200-WFBGA	10 mm	SDRAM - Mobile LPDDR4	Volatile	DRAM	1.1 V
Micron Technology Inc. MT53E256M16D1FW-046 WT:B TR	Parallel	18 ns	18 ns	4 Gbit	1.06 V	1.17 V	-30 °C	85 °C		3.5 ns	Surface Mount	2.133 GHz		200-TFBGA	16 bit	256 M	14.5 mm	200-TFBGA	10 mm	SDRAM - Mobile LPDDR4X	Volatile	DRAM

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