G05N06S2

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Goford Semiconductor

MOSFET 2N-CH 60V 5A 8SOP

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Goford Semiconductor

MOSFET 2N-CH 60V 5A 8SOP

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	G05N06S2	G05N Series

Configuration	2 N-Channel	N and P-Channel, 2 N-Channel
Current - Continuous Drain (Id) @ 25°C	5 A	5 A
Current - Continuous Drain (Id) @ 25°C	-	3.1 A
Drain to Source Voltage (Vdss)	60 V	60 V
Gate Charge (Qg) (Max) @ Vgs	22 nC	22 nC
Gate Charge (Qg) (Max) @ Vgs	-	37 nC
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1374 pF	1336 - 1454 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	8-SOIC	8-SOIC
Package / Case [x]	0.154 in	0.154 in
Package / Case [y]	3.9 mm	3.9 mm
Power - Max	-	1.9 - 2.5 W
Rds On (Max) @ Id, Vgs	35 mOhm	35 - 80 mOhm
Supplier Device Package	8-SOP	8-SOP
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V	2 - 2.5 V

MOSFET N/P-CH 60V 5A/3.1A 8SOP

Part	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Technology	Power - Max [Max]	Configuration	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]
Goford Semiconductor G05NP06S2	37 nC	22 nC	8-SOP	-55 °C	150 °C	1336 pF, 1454 pF	8-SOIC	3.9 mm	0.154 in	2 V, 2.2 V	36 mOhm, 80 mOhm	5 A	3.1 A	MOSFET (Metal Oxide)	1.9 W, 2.5 W	N and P-Channel	Surface Mount	60 V
Goford Semiconductor G05N06S2		22 nC	8-SOP	-55 °C	150 °C	1374 pF	8-SOIC	3.9 mm	0.154 in	2.5 V	35 mOhm	5 A		MOSFET (Metal Oxide)		2 N-Channel	Surface Mount	60 V	26 nC

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