BSR33QTA

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Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 80V V(BR)CEO, 1-ELEMENT, PNP, SILICON,

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Active

Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 80V V(BR)CEO, 1-ELEMENT, PNP, SILICON,

Technical Specifications

Parameters and characteristics for this part

Specification	BSR33QTA

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-243AA
Power - Max [Max]	2.1 W
Supplier Device Package	SOT-89-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

PNP, 80V, 1A, SOT89

Part	Transistor Type	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]
Diodes Inc BSR33QTA	PNP	100 MHz	100 hFE	1 A	Surface Mount	SOT-89-3	100 nA	2.1 W	80 V	500 mV	TO-243AA	150 °C	-65 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP, 80V, 1A, SOT89

Technical documentation and resources