GHXS050A170S-D3

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SemiQ

DIODE MOD SIC 1700V 150A SOT227

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Unknown

SemiQ

DIODE MOD SIC 1700V 150A SOT227

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 1700 V 150A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources

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Parameters and characteristics commom to parts in this series

Specification	GHXS050A170S-D3	GHXS050 Series

Current - Average Rectified (Io) (per Diode)	150 A	50 - 150 A
Current - Reverse Leakage @ Vr	750 µA	100 - 750 µA
Diode Configuration	2 Independent	2 Independent
Mounting Type	Chassis Mount	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C	175 ░C
Operating Temperature - Junction [Min]	-55 C	-55 C
Package / Case	SOT-227-4, miniBLOC	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	-	0 ns
Speed	No Recovery Time	No Recovery Time
Speed	-	200 - 500 mA
Supplier Device Package	SOT-227	SOT-227
Technology	SiC (Silicon Carbide) Schottky	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1700 V	600 - 1700 V
Voltage - Forward (Vf) (Max) @ If	1.9 V	1.6 - 1.9 V

DIODE MOD SIC SCHOT 650V SOT227

Part	Diode Configuration	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Mounting Type	Current - Reverse Leakage @ Vr	Speed
SemiQ GHXS050B065S-D3	2 Independent	SOT-227	95 A	0 ns	650 V	SOT-227-4, miniBLOC	No Recovery Time	1.6 V	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	Chassis Mount	125 µA
SemiQ GHXS050A170S-D3	2 Independent	SOT-227	150 A		1700 V	SOT-227-4, miniBLOC	No Recovery Time	1.9 V	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	Chassis Mount	750 µA
SemiQ GHXS050A060S-D3	2 Independent	SOT-227	50 A		600 V	SOT-227-4, miniBLOC		1.8 V	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	Chassis Mount	100 µA	200 mA, 500 ns