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DMC3026LSD-13 - Package Image for SO-8

DMC3026LSD-13

Active
Diodes Inc

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 30 V, 30 V, 6.5 A, 6.5 A, 0.019 OHM

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DMC3026LSD-13 - Package Image for SO-8

DMC3026LSD-13

Active
Diodes Inc

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 30 V, 30 V, 6.5 A, 6.5 A, 0.019 OHM

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMC3026LSD-13
ConfigurationN and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C8.2 A, 8 A
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs10.9 nC
Gate Charge (Qg) (Max) @ Vgs6 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds641 pF, 1241 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]1.6 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs28 mOhm, 25 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.64
10$ 0.55
100$ 0.38
500$ 0.30
1000$ 0.24
Digi-Reel® 1$ 0.64
10$ 0.55
100$ 0.38
500$ 0.30
1000$ 0.24
Tape & Reel (TR) 2500$ 0.22
5000$ 0.20
12500$ 0.19
25000$ 0.19

Description

General part information

DMC3026LSD Series

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.