DMC4015SSD-13

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Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMC4015SSD-13

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	6.2 A, 8.6 A
Drain to Source Voltage (Vdss)	40 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	40 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1810 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.2 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Complementary Pair Enhancement Mode MOSFET

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMC4015SSD-13	MOSFET (Metal Oxide)	6.2 A 8.6 A	1.2 W	Surface Mount	1810 pF	15 mOhm	8-SO	N and P-Channel	Logic Level Gate	40 V	3 V	8-SOIC	3.9 mm	0.154 in	-55 °C	150 °C	40 nC

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General part information

Complementary Pair Enhancement Mode MOSFET

Technical documentation and resources