NTD2955T4G
ActivePOWER MOSFET, P CHANNEL, 60 V, 12 A, 180 MILLIOHMS, TO-252 (DPAK), 3PINS, SURFACE MOUNT
NTD2955T4G
ActivePOWER MOSFET, P CHANNEL, 60 V, 12 A, 180 MILLIOHMS, TO-252 (DPAK), 3PINS, SURFACE MOUNT
Description
General part information
NTD2955T4G
This Power MOSFET is designed to withstand high energy in the Avalanche and Commutation Modes. Designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.
Technical Specifications
Parameters and characteristics for this part
| Specification | NTD2955T4G |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 12 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 30 nC |
| Input Capacitance (Ciss) (Max) | 750 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 155 °C, 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power Dissipation (Max) | 55 W |
| Rds On (Max) | 180 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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