GT50JR21(STA1,E,S)
ActiveToshiba Semiconductor and Storage
PB-F IGBT / TRANSISTOR TO-3PN(OS
GT50JR21(STA1,E,S)
ActiveToshiba Semiconductor and Storage
PB-F IGBT / TRANSISTOR TO-3PN(OS
Description
General part information
GT50JR21(STA1,E,S)
IGBT 600 V 50 A 230 W Through Hole TO-3P(N)
Technical Specifications
Parameters and characteristics for this part
| Specification | GT50JR21(STA1,E,S) |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 100 A |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-3P-3, SC-65-3 |
| Package Name | TO-3P(N) |
| Power - Max | 230 W |
| Vce(on) (Max) | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Pricing
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